Method of manufacturing a semiconductor device
AssigneeDongbuAnam Semiconductor Inc.
InventorsByung Hyun Jung, Dae Heok Kwon
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is disclosed wherein a WSiN layer is deposited in a contact hole as a barrier metal using an ALD process. A tungsten layer is deposited on the WSiN layer in the nucleation stage thereof. Then, using a CVD process, the contact hole is completely filled with a tungsten layer. The WSiN layer is continuously and uniformly deposited in the contact hole having high aspect ratio, and the tungsten layer in the nucleation stage can be continuously and uniformly deposited on the WSiN layer, thus completely filling the contact hole with a tungsten layer deposited by the CVD process.
Claims14
A method of manufacturing a semiconductor device, comprising:
- forming an insulating layer on a semiconductor substrate;
- forming a contact hole on the insulating layer;
- depositing a WSiN layer in the contact hole and on the insulating layer using an atomic layer deposition process, wherein a single atomic layer of the WSiN layer is deposited by a continuous cycle comprising:
- injecting SiH4 gas,
- purging any remaining SiH4 gas using an inert gas,
- injecting WF6 gas,
- purging the remaining WF6 gas using an inert gas,
- injecting NH3 gas, and
- purging any remaining NH3 gas using inert gas;
- depositing a tungsten layer on the barrier metal using the atomic layer deposition process;
- and
- filling the contact hole with a tungsten.
Dependencies are inferred from the claim text.