Method of forming a shallow trench isolation device to prevent kick effect

A method of forming a shallow trench isolation device to prevent kick effect, comprising:

• providing a semiconductor structure having a patterned masking layer formed thereon;
• etching a portion of the semiconductor structure using the patterned masking layer as a mask to thereby form a shallow trench;
• forming an undoped liner oxide layer on the semiconductor structure to cover a surface of the shallow trench;
• forming a doped dielectric layer on the undoped liner oxide layer to cover the shallow trench, the doped dielectric layer being formed of a material selected from the group consisting of borophosphosilicate glass (BPSG), boron nitride (BN), and POCl3;
• forming a layer of oxide on the semiconductor structure to fill the shallow trench, wherein dopants in the doped dielectric layer diffuse into the semiconductor structure surrounding the shallow trench;
• and
• removing the remaining oxide and the patterned masking layer on the surface of the semiconductor structure to form a trench isolation device.