Contrast enhanced photolithography
AssigneeAgilent Technologies, Inc.
InventorJennifer Lu
Life of this patent
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Abstract
Contrast enhanced photolithography methods and devices formed by the same are described. In accordance with these methods, a photoresist layer is formed on a substrate. A contrast enhancing system including a solution or dispersion of a photobleachable dye is formed on the photoresist layer. The photoresist layer is exposed through an imaging pattern and through the contrast enhancing system to radiation having a wavelength between about 230 nm and about 300 nm. The contrast enhancing layer is removed, and the photoresist layer is developed to form a photoresist pattern on the substrate. The contrast enhancing system may be removed and the photoresist layer may be developed in a single process step or in different process steps.
Claims40
A contrast enhanced photolithographic method, comprising:
- forming a photoresist layer on a substrate;
- forming on the photoresist layer a contrast enhancing system comprising a solution or dispersion comprising a photobleachable dye having a formula selected from the group consisting of
- wherein one or more of R, R1, and R2 represents a polar substituent group selected from a carboxylic acid, a substituted carboxylic acid, a hydroxyalkyl, and a substituted hydroxyalkyl;
- through an imaging pattern and through the contrast enhancing system exposing the photoresist layer to radiation having a wavelength between about 230 nm and about 300 nm;
- removing the contrast enhancing system;
- and
- developing the photoresist layer to form a photoresist pattern on the substrate.
A contrast enhanced photolithographic method, comprising:
- forming a photoresist layer on a substrate;
- forming on the photoresist layer a contrast enhancing system comprising a solution or dispersion of a photobleachable dye having a formula
- wherein one or more of R1, R2, and R3 represents a polar substituent group;
- through an imaging pattern and through the contrast enhancing system exposing the photoresist layer to radiation having a wavelength between about 230 nm and about 300 nm;
- removing the contrast enhancing system;
- and
- developing the photoresist layer to form a photoresist pattern on the substrate.
A contrast enhanced photolithographic method, comprising:
- forming a photoresist layer on a substrate;
- forming on the photoresist layer a contrast enhancing system comprising a solution or dispersion of a photobleachable dye isomerizable upon exposure to radiation having a wavelength between about 230 nm and about 300 nm from a cis-isomer substantially absorptive of radiation having a wavelength between about 230 nm and about 300 nm to a trans-isomer substantially transmissive to radiation having a wavelength between about 230 nm and about 300 nm;
- through an imaging pattern and through the contrast enhancing system exposing the photoresist layer to radiation having a wavelength between about 230 nm and about 300 nm;
- removing the contrast enhancing system;
- and
- developing the photoresist layer to form a photoresist pattern on the substrate.
Dependencies are inferred from the claim text.