Process to form fine features using photolithography and plasma etching

Abstract

Methods of making a sharp pointed structure (19), such as a sharp pointed structure in a semiconductor, includes providing a substrate (14) and then depositing an oxide layer (16), such as silicon oxide or silicon nitride, on the substrate (14) and depositing a low contrast photoresist (17) on the oxide layer (16). The low contrast photoresist (17) is then exposed to optical energy through a reticle (21), with the reticle (21) having a partially triangular shape (22), such as an equilateral triangle with a tip. The low contrast photoresist (17) is developed and the oxide layer (16) is etched to form the sharp pointed structure (19). Additionally, a film is deposited (15), such as a magnetoresistive layer, between the substrate (14) and the oxide layer (16). The low contrast photoresist (17) is removed and the film (15) is etched to create a sharp pointed film structure (23) in the film (15).

Dependencies are inferred from the claim text.