Semiconductor wafer susceptor
AssigneeTokyo Electron Limited
InventorsAnthony Dip, Takanori Saito, Raymond Joe
Life of this patent
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Abstract
A semiconductor wafer susceptor for batch substrate processing. The susceptor includes a central region in a primary plane and a plurality of flat annular extensions extending below the central region in a secondary plane. The primary and secondary planes are parallel to each other. An edge of the substrate overhangs the central region allowing no contact of the susceptor with the substrate edge.
Claims17
A plurality of semiconductor wafer susceptors oriented to form a vertical boat for use in processing a plurality of substrates having a diameter of 200 mm or 300 mm, each of said susceptors comprising:
- a flat circular central region situated in a primary plane, for supporting said substrate thereon, said circular central region having a diameter less than said diameter of said substrate;
- and
- a flat annular extension connected to said circular central region so as to be disposed below said central region in a secondary plane, whereby an edge of said substrate on said circular central region overhangs said central region,
- wherein said annular extension provides said susceptor with an overall diameter which is greater than said diameter of said substrate on said circular central region.
A plurality of semiconductor wafer susceptors oriented to form a vertical boat for use in processing a plurality of substrates having a diameter of 200 mm or 300 mm, each of said susceptors comprising:
- a flat circular central region situated in a primary plane, for supporting said substrate thereon, said circular central region having a diameter less than said diameter of said substrate;
- and
- a flat annular extension connected to said circular central region so as to be disposed below said central region in a secondary plane, whereby an edge of said substrate on said circular central region overhangs said central region,
- wherein said annular extension provides said susceptor with an overall diameter which is greater than said diameter of said substrate on said circular central region, and
- wherein said susceptor is composed of the group consisting of quartz, silicon, graphite, diamond-coated graphite, or silicon-coated graphite.
Dependencies are inferred from the claim text.