Loading patent…
AssigneeHiatchi, Ltd.
InventorsKazuo Takeda, Jun Gotou, Masakazu Saito, Makoto Ohkura, Takeshi Satou, Hiroshi Fukuda, Takeo Shiba
Estimating the term…
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.
A process for production of a polycrystalline semiconductor thin film which comprises having a means to shape laser light into a linear beam and a one-dimensionally periodic stripy pattern to spatially and periodically modulate the intensity of pulsed laser light in the direction of the long axis of the linear beam, wherein the pulsed laser light is solid-state laser light.
A process for production of a polycrystalline semiconductor thin film which comprises having a means to shape laser light into a linear beam and a one-dimensionally periodic stripy pattern to spatially and periodically modulate the intensity of pulsed laser light in the direction of the long axis of the linear beam, wherein a phase-shifting mask with a stripy pattern is used to modulate the intensity of the pulsed laser light, and the phase-shifting mask is formed with a raised and lowered stripy pattern formed on a surface of a quartz substrate.
In a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light, a process for producing a polycrystalline semiconductor thin film which comprises having a means to scan the substrate, a means to shape laser light into a linear beam, a one-dimensionally periodic stripy pattern to spatially and periodically modulate the intensity of pulsed laser in the direction of the long axis of the linear beam, and repeating pulse irradiation by moving and scanning the substrate, with the angle between the direction of the stripe and the direction of scanning adjusted such that the amount of movement in the direction of scanning between shots is more than 20 μm and the amount of displacement of the distribution of the intensity of the irradiating light in the scanning direction and the vertical direction less than 1 μm.
In a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light, a process for producing a polycrystalline semiconductor thin film which comprises having a means to shape laser light into a linear beam and a one-dimensionally periodic stripy pattern to spatially and periodically modulate the intensity of pulsed laser in the direction of the long axis of the linear beam, with the angle between the direction of the stripe and the direction of scanning is within the range from 0.1 to 2 degrees.
In a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light, a process for producing a polycrystalline semiconductor thin film which comprises having a means to shape laser light into a linear beam and a one-dimensionally periodic stripy pattern to spatially and periodically modulate the intensity of pulsed laser in the direction of the long axis of the linear beam, with the angle between the direction of the stripe and one side of the substrate being within the range from 0.1 to 2 degrees.
In a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light, a process for producing a polycrystalline semiconductor thin film which comprises having a means to shape laser light into a linear beam and a one-dimensionally periodic stripy pattern to spatially and periodically modulate the intensity of pulsed laser in the direction of the long axis of the linear beam, in which hillocks whose height is high locally compared with the surroundings are linearly arranged, the average distance of the arrays exists in a plural number, and the array is periodic, and there exist no amorphous regions between hillocks.
In a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light, a process for producing a polycrystalline semiconductor thin film which comprises having a means to shape laser light into a linear beam and a one-dimensionally periodic stripy pattern to spatially and periodically modulate the intensity of pulsed laser in the direction of the long axis of the linear beam, in which a plurality of pattern periods are the relation of multiple.
In a process of crystallization by irradiation of a semiconductor thin film formed on a substrate using CW laser light, a process for producing a semiconductor thin film which comprises having a means to shape the CW laser light into a linear beam and a means to modulate laser intensity periodically and spatially in the direction of the long axis of the linear beam, thereby forming a polycrystalline film composed of crystals grown in the in-plane direction over the entire region irradiated with the linear beam.
Dependencies are inferred from the claim text.