Low resistivity silicon carbide
AssigneeShipley Company, L.L.C.
InventorsJitendra S. Goela, Michael A. Pickering
Life of this patent
Estimating the term…
Abstract
Free standing articles of chemical vapor deposited silicon carbide with electrical resistivities of less than 0.9 ohm-cm are provided without substantially degrading its thermal conductivity or other properties.
Claims18
A free standing article comprising chemical vapor deposited, low-resistivity silicon carbide having a nitrogen concentration of at least 6.3×1018 atoms N per cubic centimeter and an electrical resistivity of less than 0.9 ohm-cm.
A free standing article comprising chemical vapor deposited, low-resistivity silicon carbide having a nitrogen concentration of at least 6.3×1018 atoms N per cubic centimeter and an electrical resistivity of less than 0.9 ohm-cm and a flexural strength of at least 390 MPa.
A free standing article comprising chemical vapor deposited, low-resistivity silicon carbide having a nitrogen concentration of at least 6.3×1018 atoms N per cubic centimeter and an electrical resistivity of less than 0.9 ohm-cm and a thermal conductivity of between 260 W/mK and 329 W/mK.
Dependencies are inferred from the claim text.