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US 7,018,920 B2Granted
Composite sacrificial material
AssigneeIntel Corporation
InventorsRobert P. Meagley, Michael D. Goodner
Life of this patent
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Abstract
A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.
Claims10
An apparatus comprising:
- a semiconductor substrate having a conductive layer, a barrier layer over the conductive layer, and a dielectric layer over the barrier layer;
- a first opening and a second opening etched into the dielectric layer, at least one of the openings extending through the dielectric layer to the barrier layer;
- and
- a composite sacrificial material in at least one of the first and second openings, the composite sacrificial material including particulate filler material in a liquid matrix, said filler material includes at least one of polymer particles, titanium, carborane, or zirconia.
1 more element
Dependencies are inferred from the claim text.