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US 7,018,916 B2Granted
Structure and method for forming a dielectric chamber and electronic device including the dielectric chamber
AssigneeInternational Business Machines Corporation
InventorsGeorge C. Feng, Louis L. Hsu, Rajiv V. Joshi
Life of this patent
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Abstract
A method (and structure) that selectively forms a dielectric chamber on an electronic device by forming a dummy structure over a semiconductor substrate, depositing a dielectric layer over the dummy structure, forming an opening through the dielectric layer to the dummy structure, and removing the dummy structure to form the dielectric chamber.
Claims19
A method of forming a dielectric chamber in the vicinity of a semiconductor device area, the method comprising:
- forming a dummy structure over a semiconductor substrate;
- depositing a dielectric layer over the dummy structure;
- forming an opening through the dielectric layer to the dummy structure;
- and
- removing the dummy structure to form the dielectric chamber, wherein forming the dummy structure comprises forming the dummy structure using a polysilicon material.
2 more elements
A method of forming a dielectric chamber in the vicinity of a semiconductor device area, the method comprising:
- forming a dummy structure over a semiconductor substrate;
- depositing a dielectric layer over the dummy structure;
- forming an opening through the dielectric layer to the dummy structure;
- removing the dummy structure to form the dielectric chamber;
- and
- depositing a metal layer over the dummy structure.
3 more elements
Dependencies are inferred from the claim text.