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US 7,018,902 B2Granted
Gate dielectric and method
AssigneeTexas Instruments Incorporated
InventorsMark R. Visokay, Antonio L. P. Rotondaro, Luigi Colombo
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Abstract
A MOSFET structure with high-k gate dielectric layer and silicon or metal gates, amorphizing treatment of the high-k gate dielectric layer as with a plasma or ion implantation.
Claims8
A method of fabrication of an integrated circuit, comprising the steps of:
- providing a substrate;
- forming a high-k dielectric layer on said substrate;
- amorphizing said dielectric layer by ion bombardment;
- forming gate material on said amorphized dielectric layer;
- and
- forming gates from said gate material.
3 more elements
Dependencies are inferred from the claim text.