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US 7,018,899 B2Granted
Methods of fabricating lateral double-diffused metal oxide semiconductor devices
AssigneeDongbuAnam Semiconductor Inc.
InventorWoong Je Sung
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Abstract
Methods for fabricating LDMOS transistors are disclosed. A disclosed method includes: forming a device isolation structure in a semiconductor substrate through an STI process; forming a photoresist pattern exposing the device isolation structure; forming double diffused wells by implanting ions into the substrate; removing the exposed device isolation structure; and removing the photoresist pattern.
Claims4
A method of fabricating an LDMOS transistor comprising:
- forming a device isolation structure in a semiconductor substrate through an STI process;
- forming a photoresist pattern exposing the device isolation structure;
- implanting ions into the substrate to form double diffused wells, wherein the exposed device isolation structure and the photoresist pattern are used as masks for implanting the ions;
- removing the exposed device isolation structure;
- and
- removing the photoresist pattern.
3 more elements
Dependencies are inferred from the claim text.