Dual work function gate electrodes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hao Wang, Tzung-Lin Li, Yen-Ping Wang, Chun-Yen Chang
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Abstract
Methods of manufacturing transistor gate electrodes including, in one embodiment, forming a metal layer over first and second regions of a substrate, wherein the first and second regions have different first and second dopant types, respectively. A semiconductor layer is formed over at least a portion of the second region. The metal layer is heated to form a metal gate electrode over the first region, and the metal layer and the semiconductor layer are collectively heated to form a composite metal gate electrode over the second region.
Claims22
A method of manufacturing gate electrodes, comprising
- forming a first metal layer having a first thickness over a first region of a substrate;
- forming a second metal layer having a second thickness over the first metal layer;
- forming a third metal layer having a third thickness over a second region of the substrate, wherein the first and second regions have first and second dopant types, respectively;
- forming a fourth metal layer having a fourth thickness over the third metal layer;
- heating and patterning the first and second metal layers to form a first composite metal gate electrode;
- and
- heating and patterning the third and fourth metal layers to form a second composite metal gate electrode;
- wherein the first and second thicknesses are collectively substantially different from the third and fourth thicknesses, collectively.
A method of manufacturing gate electrodes, comprising
- forming a first composite metal layer over a first region of a substrate by co-sputtering in which power applied to first and second targets is adjusted to form a first composition gradient in the first composite metal layer;
- forming a second composite metal layer over a second region of the substrate by co-sputtering in which power applied to third and fourth targets is adjusted to form a second composition gradient in the second composite metal layer, wherein the first and second regions have first and second dopant types, respectively;
- and
- heating and patterning the first and second composite metal layers to form first and second composite metal gate electrodes.
Dependencies are inferred from the claim text.