Selective delamination of thin-films by interface adhesion energy contrasts and thin film transistor devices formed thereby

A self-aligned thin film transistor device, comprising:

• a first patterned layer;
• a first dielectric layer provided over the first patterned layer;
• a semiconductor layer provided over the first dielectric layer;
• a patterned second dielectric layer provided over at least a portion of the semiconductor layer, the patterned second dielectric layer being self-aligned to the first patterned layer;
• a doped layer provided over a portion of the semiconductor layer that is not covered by the second dielectric layer, the doped layer being adjacent to at least one substantially vertical surface of the second dielectric layer;
• and
• a patterned metal layer provided over the doped layer;
• wherein any portion of the patterned metal layer and the doped semiconductor layer that covers any non-vertical portion of the second dielectric layer surface is removed by delamination.

A self-aligned thin film transistor device, comprising:

• a first patterned layer;
• a semiconductor layer provided over the first patterned layer;
• a first dielectric layer provided over at least a portion of the semiconductor layer;
• a second dielectric layer provided over at least a portion of the semiconductor layer, the patterned second dielectric layer being self-aligned to the first patterned layer;
• a stressed metal layer provided over the first dielectric layer and the semiconductor layer;
• wherein a portion of the stressed metal layer provided over the second dielectric layer is delaminated and separates the metal layer from the semiconductor layer.

A method of separating a film from a substrate comprising:

• providing a first film on a substrate;
• providing a second film adjacent to the first film in a longitudinal direction, the second film having an adhesive energy to the substrate larger than an adhesive energy to the substrate of the first film;
• providing a stressed film over the first and second films;
• initiating a delamination of the first film and the stressed film from the substrate.