Method of protecting an element of an integrated circuit against the formation of a metal silicide

A method of protecting a semiconductor material against the formation of a metal silicide, wherein the semiconductor material belongs to a component of an integrated circuit, wherein the integrated circuit includes other components that have to be subjected to a siliciding operation, comprising:

• forming a layer of a silicon/germanium alloy on the semiconductor material;
• and
• wherein forming comprises:
• depositing the layer of silicon/germanium alloy on an entire integrated circuit;
• and
• removing the layer of silicon/germanium alloy from areas of the integrated circuit that are to be silicided.

A method of protecting a semiconductor material against the formation of a metal silicide, comprising:

• forming a layer of a silicon/germanium alloy on the semiconductor material;
• depositing a metal on an integrated circuit;
• forming a metal silicide on areas of the integrated circuit that are not protected by the silicon/germanium alloy;
• removing unreacted metal and a metal/silicon/germanium ternary alloy that may have formed when the metal silicide is formed;
• and
• removing the layer of silicon/germanium alloy so as to expose unsilicided areas of the integrated circuit.

A method for fabricating an integrated circuit, comprising:

• depositing a layer of a silicon/germanium alloy on an integrated circuit;
• removing the layer of silicon/germanium alloy from areas of the integrated circuit that are to be silicided;
• depositing a metal on an integrated circuit;
• forming a metal silicide on areas of the integrated circuit that are not protected by the silicon/germanium alloy;
• removing unreacted deposited metal and a metal/silicon/germanium ternary alloy that may have formed when the metal silicide is formed;
• and
• removing the layer of silicon/germanium alloy so as to expose unsilicided areas of the integrated circuit.

A method for fabricating an integrated circuit which includes first components to be subjected to a siliciding operation and second components not to be subjected to the siliciding operation, comprising:

• depositing a layer of silicon/germanium alloy on the integrated circuit covering both the first and second components;
• removing the layer of silicon/germanium alloy from the first components;
• and
• siliciding the integrated circuit.