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US 7,018,717 B2Granted
Antireflective hard mask compositions
AssigneeShipley Company, L.L.C.
InventorEdward K. Pavelchek
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Abstract
New organic-based radiation absorbing compositions are provided that are suitable for use as an antireflective coating composition (“ARC”) for an overcoated photoresist. These compositions also serve effectively as a hard mask layer by exhibiting a sufficient plasma etch selectively from an undercoated dielectric layer.
Claims10
A method for forming a photoresist relief image
- (a) applying over an integrated circuit substrate a coating layer of an antireflective composition that comprises at least two resins,
- the at least two resins comprising i) a silsesquioxane resin and ii) an organic resin that comprises one or more phenyl groups;
- and
- (b) applying a coating layer of a photoresist composition over the antireflective composition layer;
- and
- (c) exposing the photoresist composition to patterned radiation having a wavelength of below 200 nm and developing the exposed photoresist composition layer to form a photoresist relief image.
3 more elements
Dependencies are inferred from the claim text.