Electron beam processing method
AssigneeSII NanoTechnology Inc.
InventorsOsamu Takaoka, Ryoji Hagiwara
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Abstract
A microscopic projection or a characteristic pattern are formed in the vicinity of a region to be processed before processing using electron beam CVD, during processing an image of a region containing the projection or pattern formed by electron beam CVD is captured to obtain a current position of the projection or pattern, a difference between the position before staring and the current position is treated as a drift amount and processing is restarted at a region that has been subjected to microscopic adjustment of the electron irradiation region.
Claims12
An electron beam processing method comprising the steps of:
- forming, in advance, a reference pattern by electron beam CVD while source material gas flows to the vicinity of a region to be processed before processing with an electron beam;
- acquiring a secondary electron image of a region including the reference pattern before and during processing of the region to calculate an amount of movement in the X direction and the Y direction of a position of the reference pattern;
- and
- carrying out processing on the region while correcting an irradiation position of the electron beam in the X direction and the Y direction based on the calculated amount of movement of the position of the reference pattern.
A method of correcting an irradiation position of an electron beam, comprising the steps of:
- forming a reference marker by electron beam CVD in the vicinity of a region of a sample to be processed with an electron beam;
- acquiring secondary electron images of a sample region that includes the reference marker before and during processing of the sample region with an electron beam;
- calculating from the secondary electron images an amount of drift in X and Y directions of the position of the reference marker;
- and
- carrying out processing on the sample region while correcting an irradiation position of the electron beam in the X and Y directions based on the calculated amount of drift of the position of the reference marker.
Dependencies are inferred from the claim text.