Substrate treating method, substrate-processing apparatus, developing method, method of manufacturing a semiconductor device, and method of cleaning a developing solution nozzle

A substrate treating method comprising:

• supplying a treating solution onto a substrate;
• and
• continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction,
• wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate,
• the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate,
• the first jet region is disposed on a rear side of the first discharge region with respect to the movement direction,
• the nozzle discharges a second cleaning solution to the substrate from a second discharge region,
• the length of the direction crossing at right angles to the direction of the second discharge region is equal to or more than the maximum diameter or longest side of the substrate,
• the second discharge region is disposed on the rear side of a first jet port with respect to the movement direction,
• the nozzle spouts a second gas to the substrate from a second jet region,
• the length of the direction crossing at right angles to the direction of the second jet region is equal to or more than the maximum diameter or longest side of the substrate, and
• the second jet region is disposed on the rear side of a second discharge port with respect to the movement direction.