Atomic layer deposition methods of forming silicon dioxide comprising layers

An atomic layer deposition method of forming a silicon dioxide-comprising layer on a substrate, comprising:

• providing a substrate within a deposition chamber;
• (a) flowing trimethylsilane to the chamber and flowing inert gas to the chamber under conditions effective to chemisorb a first species monolayer comprising silicon onto the substrate, the inert gas-flowing being at a first rate;
• (b) after forming the first species monolayer, ceasing flow of the trimethylsilane to the chamber while flowing the inert gas to the chamber effective to purge trimethylsilane from the chamber;
• (c) after purging the trimethylsilane from the chamber, flowing an oxidant and flowing the inert gas to the chamber under conditions effective to react the oxidant with the chemisorbed first species and form a monolayer comprising silicon dioxide on the substrate;
• the inert gas-flowing during the oxidant-flowing being at a second rate which is less than the first rate;
• (d) after forming the silicon dioxide-comprising monolayer, ceasing flow of the oxidant to the chamber while flowing the inert gas to the chamber effective to purge oxidant from the chamber;
• and
• successively repeating said (a)–(d) flowings effective to form a silicon dioxide-comprising layer on the substrate.

An atomic layer deposition method of forming a silicon dioxide-comprising layer on a substrate, comprising:

• providing a substrate within a deposition chamber;
• flowing trimethylsilane to the chamber under conditions effective to chemisorb a first species monolayer comprising silicon onto the substrate;
• after forming the first species monolayer, flowing an oxidant to the chamber under conditions effective to react the oxidant with the chemisorbed first species and form a monolayer comprising silicon dioxide on the substrate;
• the oxidant being flowed to the chamber at a flow rate of at least 2000 sccm;
• and
• successively repeating said trimethylsilane and oxidant-flowings effective to form a silicon dioxide-comprising layer on the substrate.