Versatile system for controlling semiconductor topography

A method for controlling post-processing topology of semiconductor wafers that utilize copper metallization, the method comprising the steps of:

• providing a semiconductor wafer having copper metallization;
• providing a processing function to perform a process on the semiconductor wafer;
• providing a profilometry function to render a characterization of actual surface topology of the semiconductor wafer after the process is performed;
• providing an input data set comprising a desired post-processing topology for the semiconductor wafer;
• providing a control system to receive the input data set and the characterization;
• utilizing the control system to identify a differential between the actual surface topology and the desired post-processing topology;
• and
• utilizing the control system to alter the process performed by the processing function to eliminate the differential.

A system for selectively controlling post-CMP dishing effects occurring in semiconductor wafers utilizing copper metallization, the system comprising:

• a CMP processing system adapted to perform polishing, comprising copper overpolish and barrier polish, on a semiconductor wafer utilizing copper metallization;
• a profilometer adapted to render a measurement of actual dishing occurring in the copper metallization of the semiconductor wafer after polishing;
• an input data set comprising a dishing target for the semiconductor wafer;
• a data integrity function adapted to evaluate the measurement and to generate indicia of the reliability of the measurement;
• a control modeling function adapted to receive the measurement, the indicia of reliability and the input data set, to determine a differential between the dishing target and actual dishing, to generate a processing target for eliminating the differential, and to modify its processing target generation responsive to the indicia of reliability;
• and
• a processing control function adapted to receive the processing target and to alter the copper overpolish, barrier polish, or both copper overpolish and barrier polish, responsive to the processing target.