System and method for one-time programmed memory through direct-tunneling oxide breakdown

A process, compatible with 0.13 μm or below CMOS technology, for making a one-time programming memory element, comprising the steps of:

• forming a capacitor having an oxide layer capable of passing direct gate tunneling current;
• forming a write switch including a first switch transistor coupled between a first voltage and a first terminal of the capacitor and a second switch transistor coupled between a second voltage and a second terminal of the capacitor, the first and second switch transistors each having a voltage tolerance higher than that of the capacitor, wherein enablement of the first and second switch transistors causes application of a program voltage across the capacitor oxide layer;
• and
• forming a read switch including plural transistors coupled to the capacitor, each read switch transistor having a voltage tolerance higher than that of the capacitor,
• wherein the capacitor is one-time programmable as an anti-fuse by application of the program voltage via the write switch to cause direct gate tunneling current to rupture the capacitor oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.