Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element
AssigneeDenso Corporation
InventorsYoshimi Nakase, Takanori Teshima, Yukinori Migitaka
Life of this patent
Estimating the term…
Abstract
A semiconductor element, and a pair of insulation substrates sandwiching the semiconductor element therebetween forms a substrate unit. The substrate unit is press-fitted in a recess provided between first radiation block and cooling block. The press-fitting of the substrate unit is performed by a second radiation block which is screwed to push the first radiation block toward the cooling block. A high thermal-conductive radiation material is disposed at the interfaces between each of the insulation substrates and each of the blocks to keep adhesiveness therebetween.
Claims30
A semiconductor apparatus comprising:
- a plurality of substrate units each including a semiconductor element and a pair of insulation substrates having thermal conductivity and holding the semiconductor element therebetween;
- and
- a radiation member contacting the plurality of substrate units for radiating heat produced from the plurality of substrate units, the radiation member having a single refrigerant passage therein in which refrigerant flows for absorbing the heat;
- wherein:
- the radiation member includes a cooling block which is composed of a base portion on which the plurality of substrate units are disposed in parallel and a plurality of protruding portions respectively contacting the corresponding plurality of substrate units;
- and
- the single refrigerant passage has a main passage defined in the base portion to face all the plurality of substrate units through a wall of the base portion, and a plurality of sub-passages defined in the plurality of protruding portions to face the corresponding plurality of substrate units through walls of the plurality of protruding portions.
A semiconductor apparatus comprising:
- a pair of substrate units, each of which includes a semiconductor element and a pair of insulation substrates, wherein the insulation substrates of each substrate unit have thermal conductivity and hold the semiconductor element of the substrate unit therebetween;
- a cooling block which has a base portion and a protruding portion, wherein:
- the base portion defines a refrigerant passage therein in which refrigerant flows;
- the protrusion protrudes from the base portion;
- and
- the substrate units are in contact with the cooling block in a thermal conductive manner;
- a pair of radiation blocks which are in contact with the cooling block in a thermal conductive manner and are arranged such that the radiation blocks hold the substrate units, respectively, in cooperation with the cooling block in a manner that allows thermal conduction between the radiation blocks and the substrate units, respectively;
- a support member which is inserted into the protrusion of the cooling block;
- and
- a pushing member which pushes the radiation blocks against the substrate units, respectively, toward the cooling block in cooperation with the support member.
A semiconductor apparatus comprising:
- a substrate unit including a semiconductor element, and a pair of insulation substrates having thermal conductivity and holding the semiconductor element therebetween;
- and
- a radiation member disposed in contact with the substrate unit through a contact material for radiating heat produced from the semiconductor element, wherein:
- the contact material includes:
- a resin material having thermal resistance and flexibility;
- and
- a thermal-conductive compounding member contained in the resin material;
- the compounding member includes a plurality of large particles and a plurality of small particles;
- the large particles have an average particle diameter in a range of 5–50 micrometers;
- a ratio of an average particle diameter of the small particles relative to the average particle diameter of the large particles is in a range of 0.2 to 0.4;
- and
- a mixing ratio between the large particles and the small particles is in a range of 1:1 to 1:13.
Dependencies are inferred from the claim text.