Method and system for providing a magnetic element including passivation structures
AssigneesApplied Spintronics Technology, Inc., Headway Technologies, Inc.
InventorsXizeng Shi, Po-Kang Wang, Yimin Guo, Tai Min
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Abstract
A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.
Claims12
A magnetic element comprising:
- a plurality of layers, a portion of the plurality of layers including at least one magnetic layer, the plurality of layers including a top and a plurality of sides;
- and
- a passivation layer covering at least a portion of the plurality of sides, the passivation layer being an oxygen diffusion barrier layer composed of at least one material free of SiN and AlO.
A magnetic element comprising:
- a plurality of layers, a portion of the plurality of layers including at least one magnetic layer, the plurality of layers including a top and a plurality of sides;
- and
- a passivation layer covering at least a portion of the plurality of sides;
- wherein the passivation layer further includes AlN.
A magnetic element comprising:
- a plurality of layers, a portion of the plurality of layers including at least one magnetic layer, the plurality of layers including a top and a plurality of sides;
- and
- a passivation layer covering at least a portion of the plurality of sides;
- wherein the passivation layer further includes Ta3O4.
A magnetic element comprising:
- a plurality of layers, a portion of the plurality of layers including at least one magnetic layer, the plurality of layers including a top and a plurality of sides;
- and
- a passivation layer covering at least a portion of the plurality of sides;
- wherein the passivation layer further includes SiXNYHZ, where x, y, and z are numbers.
A magnetic element comprising:
- a plurality of layers, a portion of the plurality of layers including at least one magnetic layer, the plurality of layers including a top and a plurality of sides;
- and
- a passivation layer covering at least a portion of the plurality of sides;
- wherein the plurality of layers includes an insulating tunneling barrier composed of at least one material having a first stoichiometry and wherein the passivation layer includes the at least one material having the first stoichiometry.
A magnetic memory comprising:
- a plurality of magnetic elements, each of the plurality of magnetic elements including a plurality of layers and a passivation layer, a portion of the plurality of layers including at least one magnetic layer, the plurality of layers including a top and a plurality of sides, the passivation layer covering at least a portion of the plurality of sides, the passivation layer including at least one of AlN, SiXNYHZ where x, y, and z are numbers, Ta3O4, and at least one material having a first stoichiometry for the plurality of layers including a tunneling barrier layer including the at least one material having the first stoichiometry;
- and
- a plurality of word lines, each of the plurality of word lines residing below a portion of the plurality of magnetic elements.
A magnetic memory comprising:
- a plurality of magnetic elements, each of the plurality of magnetic elements including a plurality of layers and a passivation layer, a portion of the plurality of layers including at least one magnetic layer, the plurality of layers having a top and a plurality of sides, the passivation layer covering at least a portion of the plurality of sides, the passivation layer including at least one of AlN, SiXNYHZ where x, y, and z are numbers, Ta3O4, and at least one material having a first stoichiometry for the plurality of layers including a tunneling barrier layer including the at least one material having the first stoichiometry;
- and
- a plurality of word lines, each of the plurality of word lines residing above a portion of the plurality of magnetic elements.
Dependencies are inferred from the claim text.