Well structure in high voltage device
AssigneeHynix Semiconductor Inc.
InventorSung Kee Park
Life of this patent
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Abstract
A well structure in a high voltage device comprises a first well formed in a substrate, the first well having an opposite conductive type from the substrate; a second well isolated from the first well, the second well having the same conductive type as the substrate; a field stop implant region formed between the first well and the second well and spaced apart from each of the first well and the second well by a given distance, the field stop implant region having the same conductive type as the substrate; and a pick-up region overlapped on the field stop implant region, the pick-up region having the same conductive type as the field stop implant region.
Claims8
A well structure in a high voltage device, comprising;
- a first well formed in a substrate, the first well having an implant of an opposite conductive type from the substrate;
- a second well isolated from the first well, the second well having an implant of the same conductive type as the substrate;
- a field stop implant region formed between the first well and the second well and spaced apart from each of the first well and the second well by a given distance, the field stop implant region having an implant of the same conductive type as the substrate;
- and
- a pick-up region disposed above the field stop implant region, the pick-up region having an implant of the same conductive type as the field stop implant region.
Dependencies are inferred from the claim text.