Semiconductor over-voltage protection structure for integrated circuit and for diode

An integrated circuit comprising a semiconductor structure for limiting over-voltage conditions in said integrated circuit, wherein said semiconductor structure comprises:

• a substrate;
• a semiconductor layer of a first conductivity type arranged indirectly on said substrate;
• an insulating layer arranged between and separating said substrate and said semiconductor layer;
• first and second layers of a second conductivity type formed spaced apart from one another in said semiconductor layer;
• a third layer of said first conductivity type formed in contact with said second layer in said semiconductor layer;
• a first electrode in contact with said first layer;
• a second electrode in contact with said second and third layers;
• a fourth layer of said first conductivity type formed directly in contact with and surrounding said second and third layers in said semiconductor layer;
• and
• a fifth layer of said first conductivity type formed under said first layer in said semiconductor layer and having a higher dopant concentration relative to said semiconductor layer;
• wherein said first layer is essentially ring-shaped and surrounds said second, third and fourth layers.

A diode comprising a semiconductor structure that comprises:

• a substrate;
• a semiconductor layer of a first conductivity type arranged indirectly on said substrate;
• an insulating layer arranged between and separating said substrate and said semiconductor layer;
• first and second layers of a second conductivity type formed spaced apart from one another in said semiconductor layer;
• a third layer of said first conductivity type formed in contact with said second layer in said semiconductor layer;
• a first electrode in contact with said first layer;
• a second electrode in contact with said second and third layers;
• a fourth layer of said first conductivity type formed directly in contact with and surrounding said second and third layers in said semiconductor layer;
• and
• a fifth layer of said first conductivity type formed under said first layer in said semiconductor layer and having a higher dopant concentration relative to said semiconductor layer;
• wherein said first layer is essentially ring-shaped and surrounds said second, third and fourth layers.