Vertical semiconductor device and manufacturing method thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsNorifumi Tokuda, Tadaharu Minato, Mitsuru Kaneda
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Abstract
A semiconductor device includes an n-type semiconductor substrate (1) including a p-type collector layer (2) formed in a second main surface side thereof, a trench (13) is formed in a peripheral portion of the semiconductor substrate (1) so as to surround the inside and reach the collector layer (2) from a first main surface of the semiconductor substrate (1), and a p-type isolation region (14) formed by diffusion from a sidewall of the trench (13) is provided to be connected to the collector layer (2). The trench (13) is filled with a filling material (16).
Claims6
A vertical semiconductor device comprising:
- a semiconductor substrate of a first conductivity type including a first main surface and a second main surface opposed to said first main surface, said semiconductor substrate including an element region and a peripheral provided so as to surround said element region;
- a first impurity region of a second conductivity type having a higher impurity concentration than said first conductivity type of said semiconductor substrate, formed inside said semiconductor substrate so as to be exposed at said second main surface;
- a trench provided in said peripheral region and having an almost vertical sidewall with reference to said first main surface;
- and
- a second impurity region of said second conductivity type formed along said sidewall of said trench inside of said semiconductor substrate in a prescribed thickness and electrically connected to said first impurity region, wherein
- a ratio d/w (aspect ratio) between a depth d and an opening width w of said trench is 5 or more and 100 or less.
A vertical semiconductor device comprising:
- a semiconductor substrate of a first conductivity type including a first main surface and a second main surface opposed to said first main surface, said semiconductor substrate including an element region and a peripheral region provided so as to surround said element region;
- a first impurity region of a second conductivity type having a higher impurity concentration than said first conductivity type of said semiconductor substrate, formed inside said semiconductor substrate so as to be exposed at said second main surface;
- a trench provided in said peripheral region to reach said first impurity region from said first main surface and having an almost vertical sidewall with reference to said first main surface;
- and
- a filling material filled in said trench and being made of a semiconductor material of said second conductivity type.
A vertical semiconductor device comprising:
- a semiconductor substrate of a first conductivity type including a first main surface and a second main surface opposed to said first main surface, said semiconductor substrate including an element region and a peripheral region provided so as to surround said element region;
- a first impurity region of a second conductivity type having a higher impurity concentration than said first conductivity type of said semiconductor substrate, formed inside said semiconductor substrate so as to be exposed at said second main surface;
- a plurality of trenches provided in said peripheral region so as to surround said element region with a prescribed distance therebetween;
- and
- a plurality of second impurity regions of said second conductivity type formed along sidewalls of said plurality of said trenches inside of said semiconductor substrate in a prescribed thickness and electrically connected to said first impurity region, respectively.
Dependencies are inferred from the claim text.