Substrate manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsYasuo Kakizaki, Masataka Ito
Life of this patent
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Abstract
This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer (12) is formed on a single-crystal Si substrate (11). Ions are implanted into the substrate (11) through the insulating layer (12) to form an ion-implanted layer (13). The insulating layer (12) is thinned down to form a thin insulating layer (12a). A thus prepared first substrate is placed on a second substrate (20) to form a bonded substrate stack (30). After that, the bonded substrate stack (30) is split at the ion-implanted layer (13).
Claims8
A method of manufacturing a substrate having a buried insulating layer, comprising
- an insulating layer formation step of forming an insulating layer on a semiconductor region of a first substrate including the semiconductor region;
- an implantation step of implanting ions into the semiconductor region through the insulating layer to form an ion-implanted layer;
- an insulating layer thinning step of thinning down the insulating layer by chemical etching after the implantation step;
- a bonding step of bonding a second substrate to the first substrate via the insulating layer to prepare a bonded substrate stack after the insulating layer thinning step;
- and
- a splitting step of splitting the bonded substrate stack by using the ion-implanted layer to obtain a substrate which has the insulating layer on the second substrate and a semiconductor layer as part of the semiconductor region on the insulating layer.
Dependencies are inferred from the claim text.