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AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBruno Ghyselen, Cécile Aulnette, Bénédite Osternaud, Yves-Mathieu Vaillant, Takeshi Akatsu
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A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method includes removal of substance relating to part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to a method of producing a donor wafer which can be recycled according to the invention, methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, and donor wafers which can be recycled according to the invention.
A method of recycling a donor wafer after detachment of a useful layer of a semiconductor material therefrom, wherein the donor wafer, after detachment of the useful layer, includes a substrate, a buffer structure on the substrate and a remaining portion of the useful layer, which method comprises removing at least part of the remaining portion of the useful layer in order to provide a donor wafer surface that is suitable for use in a subsequent detachment of a new useful layer.
Dependencies are inferred from the claim text.