In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applications

A method of fabricating a ferroelectric transistor comprising:

• supplying a semiconductor substrate;
• forming an indium oxide layer overlying the substrate;
• doping the indium oxide with an impurity species;
• modifying the resistance of the indium oxide, forming a doped indium oxide layer;
• forming a ferroelectric material layer overlying the doped indium oxide layer;
• forming a gate top electrode conductive layer overlying the ferroelectric material layer;
• and
• forming drain and source regions.

A method of fabricating a ferroelectric transistor comprising:

• supplying a silicon (Si) substrate;
• forming a metal oxide layer overlying the substrate;
• doping the metal oxide layer with an impurity species;
• in response to the doping, forming a conductive metal oxide layer;
• forming a gate stack overlying the conductive oxide layer;
• forming source and drain regions;
• in response to forming the conductive oxide layer, preventing elements from diffusing into the Si substrate from the gate stack;
• and
• in response to forming the conductive oxide layer, forming an electrically conductive path between the gate stack and the Si substrate.