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US 7,008,731 B2Granted
Method of manufacturing a photomask and method of manufacturing a semiconductor device using the photomask
AssigneeKabushiki Kaisha Toshiba
InventorsShigeki Nojima, Osamu Ikenaga
Life of this patent
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Abstract
A method of manufacturing a photomask includes determining dimensions of a pattern in a photomask, determining an exposure latitude on the basis of the dimensions of the mask, and judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude. The pattern in the photomask includes dimensions of critical pattern portions in which an exposure latitude is low.
Claims14
A method of manufacturing a photomask comprising:
- determining dimensions of a pattern in a photomask including dimensions of critical pattern portions in which an exposure latitude is low;
- determining an exposure latitude on the basis of the dimensions of the mask;
- and
- judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude.
1 more element
A method of manufacturing a semiconductor device comprising:
- determining dimensions of a pattern in a photomask including dimensions of critical pattern portions in which an exposure latitude is low;
- determining an exposure latitude on the basis of the dimensions of the mask;
- judging if the photomask is defective or non-defective on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude;
- and
- manufacturing a semiconductor device using a photomask that has been accepted on the basis of the judgment.
2 more elements
Dependencies are inferred from the claim text.