Application of high transmittance attenuating phase shifting mask with dark tone for sub-0.1 micrometer logic device contact hole pattern in 193 NM lithography

A method of forming contact holes in a layer of resist, comprising:

• providing a substrate;
• forming a layer of resist on said substrate, wherein said layer of resist has a first number of contact hole regions;
• providing a mask comprising a transparent mask substrate having a first number of contact hole regions and attenuating phase shifting material formed on each of said contact hole regions of said transparent mask substrate, wherein said attenuating phase shifting material is configured such that ambient light is no prevented from reaching the attenuating phase shifting material;
• exposing a contact hole pattern on said layer of resist using said mask and light having said first wavelength, whereby said contact hole regions in said layer of resist remain unexposed and the remainder of said layer of resist is exposed;
• and
• developing said layer of resist thereby forming said first number of contact holes in said layer of resist.