Method for fabricating phase mask of photolithography process

A method for forming a phase mask of the photolithography process, the method comprising:

• providing a pervious substrate;
• depositing a high transmission attenuate layer on said pervious substrate;
• forming an opaque layer on said high transmission attenuate layer;
• performing an ion-implanting process to dope said high transmission attenuate layer;
• etching said opaque layer to form a first phase region and a second phase region on said high transmission attenuate layer;
• forming a photoresist layer on said second phase region and said opaque layer to expose a partial surface of said high transmission attenuate layer that is located on said first phase region;
• performing an etching process by said photoresist layer as an etched mask to etch through the partial surface of said high transmission attenuate layer that is located on said first phase region until a phase depth within said pervious substrate;
• and
• removing said photoresist layer to form a phase shifted region in said first phase region and a phase unshifted region in said second phase region.

A method for forming a phase shifted mask of the photolithography process, the method comprising:

• providing a quartz substrate;
• forming a TaαSiβOx layer on said quartz substrate by a chemical vapor deposition process;
• forming a Chromium layer on said TaαSiβOx layer;
• performing a blanket ion-implanting process to dope said TaαSiβOx layer;
• forming a first photoresist layer on Chromium layer to define a first phase region and a second phase region;
• performing a first dry etching process by said first photoresist layer as an etched mask to etch Chromium layer, so as to form said first phase region and said second phase region on said TaαSiβOx layer;
• removing said first photoresist layer;
• forming and defining a second photoresist layer on said second phase region and said Chromium layer to expose a partial surface of said TaαSiβOx layer that is located on said first phase region;
• performing a second dry etching process by said second photoresist layer as an etched mask to etch through the partial surface of said TaαSiβOx layer that is located on said first phase region until a phase depth within said quartz substrate;
• and
• removing said second photoresist layer to form a phase shifted region with 1800 in said first phase region and a phase unshifted region with 00 in said second phase region.