Method and apparatus for controlling rippling during optical proximity correction
AssigneeSynopsys, Inc.
InventorYouping Zhang
Life of this patent
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AssigneeSynopsys, Inc.
InventorYouping Zhang
Estimating the term…
One embodiment of the present invention provides a system that controls rippling caused by optical proximity correction during an optical lithography process for manufacturing an integrated circuit. During operation, the system selects an evaluation point for a given segment, wherein the given segment is located on an edge in the layout of the integrated circuit. The system also selects a supplemental evaluation point for the given segment. Next, the system computes a deviation from a target location for the given segment at the evaluation point. The system also computes a supplemental deviation at the supplemental evaluation point. Next, the system adjusts a bias for the given segment, if necessary, based upon the deviation at the evaluation point. The system also calculates a ripple for the given segment based upon the deviation at the evaluation point and the supplemental deviation at the supplemental evaluation point. If this ripple exceeds a threshold value, the system performs a ripple control operation.
A method for controlling rippling caused by optical proximity correction during an optical lithography process used in manufacturing an integrated circuit, comprising:
A computer-readable storage medium storing instructions that when executed by a computer cause the computer to perform a method for controlling rippling caused by optical proximity correction during an optical lithography process used in manufacturing an integrated circuit, the method comprising:
An apparatus for controlling rippling caused by optical proximity correction during an optical lithography process used in manufacturing an integrated circuit, comprising:
A mask to be used in an optical lithography process for manufacturing an integrated circuit, wherein the mask is created through a process that controls rippling caused by optical proximity correction, the process comprising:
An integrated circuit created through an optical lithography process using a mask, wherein the mask is created through a process that controls rippling caused by optical proximity correction, the process comprising:
A means for controlling rippling caused by optical proximity correction during an optical lithography process used in manufacturing an integrated circuit, comprising:
Dependencies are inferred from the claim text.