MRAM and methods for manufacturing and driving the same
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-Kyeong Yoo, Wan-jun Park
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AssigneeSamsung Electronics Co., Ltd.
InventorsIn-Kyeong Yoo, Wan-jun Park
Estimating the term…
An MRAM having improved integration density and ability to use a magnetic tunneling junction (MTJ) layer having a low MR ratio, and methods for manufacturing and driving the same, are disclosed. The MRAM includes a semiconductor substrate having a bipolar junction transistor (BJT) formed thereon, a bit line coupled to an emitter of the BJT, an MTJ layer coupled to the BJT, a word line coupled to the MTJ layer, a plate line coupled to the BJT so as to be spaced apart from the MTJ layer, and an interlayer dielectric formed between components of the MRAM, wherein the MTJ layer is coupled to a base and a collector of the BJT, the plate line is coupled to the collector, and an amplifying unit for amplifying a signal while data is read out from the MTJ layer is coupled to the bit line, thereby allowing precise reading of the data.
An MRAM comprising:
A method for manufacturing an MRAM comprising:
A method of driving an MRAM in which a bipolar junction transistor is disposed on a semiconductor substrate, a bit line is coupled to an emitter of the bipolar junction transistor, a magnetic tunneling junction layer is coupled to the bipolar junction transistor, a word line is coupled to the magnetic tunneling junction layer, a plate line is coupled to the bipolar junction transistor so as to be spaced apart from the magnetic tunneling junction layer, and an interlayer dielectric is formed between components of the MRAM, wherein the magnetic tunneling junction layer is coupled to a base and a collector of the bipolar junction transistor, and the plate line is coupled to the collector, the method comprising:
A method of driving an MRAM in which a bipolar junction transistor is disposed on a semiconductor substrate, a bit line is coupled to an emitter of the bipolar junction transistor, a magnetic tunneling junction layer is coupled to the bipolar junction transistor, a word line is coupled to the magnetic tunneling junction layer, a plate line is coupled to the bipolar junction transistor so as to be spaced apart from the magnetic tunneling junction layer, and an interlayer dielectric is formed between components of the MRAM, wherein the magnetic tunneling junction layer is coupled to a base and a collector of the bipolar junction transistor, and the plate line is coupled to the collector, the method comprising:
Dependencies are inferred from the claim text.