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US 7,002,665 B2Granted
Lithography simulation method, mask pattern correction method, and substrate topography correction method
AssigneeKabushiki Kaisha Toshiba
InventorsTakashi Sato, Satoshi Tanaka, Ayako Nakano
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Abstract
An aspect of the present invention provides simulation that includes dividing a surface of a substrate onto which light that is focused at an aperture angle by a projection lens is shone into a first region onto which all of the light strikes and a second region onto which a portion of the light strikes, calculating an intensity of the light shone onto the first region, and calculating an intensity of the light shone onto the second region.
Claims18
A method of lithography simulation comprising:
- dividing a surface of a substrate onto which light that is focused at an aperture angle by a projection lens is shone into a first region onto which all of the light strikes and a second region onto which a portion of the light strikes;
- calculating an intensity of the light shone onto the first region;
- and
- calculating an intensity of the light shone onto the second region.
1 more element
A method of mask pattern correction comprising:
- dividing a surface of a substrate onto which light that is focused at an aperture angle by a projection lens is shone into a first region onto which all of the light strikes and a second region onto which a portion of the light strikes;
- calculating an intensity of the light shone onto the first region;
- calculating an intensity of the light shone onto the second region;
- calculating an exposure pattern to be transferred to the substrate using a mask pattern based on the intensities of the light shone onto the first and second regions;
- and
- correcting the shape of mask pattern in such a manner as to reduce the amount of deviation of the exposure pattern from a desired design pattern.
3 more elements
A method of substrate topography correction comprising:
- dividing a surface of a substrate onto which light that is focused at an aperture angle by a projection lens is shone into a first region onto which all of the light strikes and a second region onto which a portion of the light strikes;
- calculating an intensity of the light shone onto the first region;
- calculating an intensity of the light shone onto the second region;
- calculating an exposure pattern to be transferred to the substrate based on the intensities of the light shone onto the first and second regions;
- and
- correcting the topology of the substrate in such a manner as to reduce the amount of deviation of the exposure pattern from a desired design pattern.
3 more elements
Dependencies are inferred from the claim text.