Back to results
US 7,002,197 B2Granted
Cross point resistive memory array
AssigneeHewlett-Packard Development Company, L.P.
InventorsFrederick A. Perner, Manish Sharma
Life of this patent
Estimating the term…
Abstract
A cross point resistive memory array has a first array of cells arranged generally in a plane. Each of the memory cells includes a memory storage element and is coupled to a diode. The diode junction extends transversely to the plane of the array of memory cells.
Claims7
A magnetic memory cell comprising:
- a magnetic storage element, the magnetic storage element having a plurality of layers including a first magnetoresistive layer and a second magnetoresistive layer and a non-magnetic material layer therebetween;
- a current control element coupled to the magnetic storage element to control current flow therethrough, the current control element including a first region of material of a first conductive type and a second region of material of a second conductive type and defining a junction therebetween, wherein the junction extends transversely to each of the layers in the magnetic storage element;
- and
- wherein the first region of the current control element is in the form of a core and the second region is in the form of a circumferential layer formed on the core, wherein the first and second regions form a pillar structure wherein the pillar structure is disposed within a first conductor line such that the first conductor line surrounds the sides of the pillar structure.
1 more element
Dependencies are inferred from the claim text.