Magnetic random access memory (MRAM) cells having split sub-digit lines
AssigneeSamsung Electronics Co., Ltd.
InventorJae-Hyun Park
Life of this patent
Estimating the term…
Abstract
Magnetic random access memory cells having split sub-digit lines include a pair of sub-digit lines disposed over a semiconductor substrate. The pair of sub-digit lines are spaced apart from each other when viewed from a top plan view. A magnetic resistor is disposed over the pair of sub-digit lines. The magnetic resistor is disposed to overlap with the pair of sub-digit lines. The magnetic resistor is electrically connected to a predetermined region of the semiconductor substrate through a magnetic resistor contact hole that penetrates a gap region between the pair of sub-digit lines.
Claims29
A magnetic random access memory cell, comprising:
- first and second sub-digit lines disposed over a semiconductor substrate, the first and second sub-digit lines being spaced apart from each other when viewed from a top plan view;
- and
- a magnetic resistor disposed over the first and second sub-digit lines and overlapping with the first and second sub-digit lines, wherein the magnetic resistor is electrically connected to a predetermined region of the semiconductor substrate through a magnetic resistor contact hole that penetrates a gap region between the first and second sub-digit lines.
A magnetic random access memory cell, comprising:
- first and second sub-digit lines disposed over a semiconductor substrate, the first and second sub-digit lines being spaced apart from each other when viewed from a top plan view;
- and
- a magnetic resistor disposed over the first and second sub-digit lines, wherein the magnetic resistor is electrically connected to a predetermined region of the semiconductor substrate through a magnetic resistor contact hole that penetrates a gap region between the first and second sub-digit lines and wherein the first and second sub-digit lines extend parallel to each other and contact each other beyond the magnetic resistor, to form a single merged digit line-having an opening beneath the magnetic resistor, and wherein the magnetic resistor contact hole penetrates the opening.
A magnetic random access memory cell, comprising:
- an access MOS transistor at a predetermined region of a semiconductor substrate;
- first and second parallel sub-digit lines disposed over the access MOS transistor;
- a magnetic resistor disposed over the first and second sub-digit lines to overlap with the first and second sub-digit lines, the magnetic resistor being electrically connected to a drain region of the access MOS transistor through a magnetic resistor contact hole that penetrates a gap region between the first and second sub-digit lines;
- and
- a bit line disposed over the magnetic resistor and electrically connected to the magnetic resistor, wherein the bit line crosses over the first and second sub-digit lines.
A magnetic random access memory cell, comprising:
- an access MOS transistor at a predetermined region of a semiconductor substrate;
- a merged digit line disposed over the access MOS transistor, the merged digit line having an opening in a predetermined region thereof;
- a magnetic resistor disposed over the opening to overlap with the merged digit line, the magnetic resistor being electrically connected to a drain region of the access MOS transistor through a magnetic resistor contact hole that penetrates the opening;
- and
- a bit line disposed over the magnetic resistor and electrically connected to the magnetic resistor, the bit line being disposed to cross over the merged digit line.
A Magnetic Random Access Memory (MRAM) cell comprising:
- an MRAM substrate;
- a magnetic resistor on the MRAM substrate;
- and
- first and second digit lines between the magnetic resistor and the MRAM substrate and extending beneath the magnetic resistor, wherein the magnetic resistor overlaps the first and second digit lines.
A Magnetic Random Access Memory (MRAM) cell comprising:
- an MRAM substrate;
- a magnetic resistor on the MRAM substrate;
- and
- first and second digit lines between the magnetic resistor and the MRAM substrate and extending beneath the magnetic resistor, wherein the first and second digit lines merge into a single digit line beyond the magnetic resistor.
A Magnetic Random Access Memory (MRAM) cell comprising:
- an MRAM substrate;
- a magnetic resistor on the MRAM substrate;
- first and second digit lines between the magnetic resistor and the MRAM substrate and extending beneath the magnetic resistor;
- and
- a merged digit line between the magnetic resistor and the MRAM substrate, extending beneath the magnetic resistor and including therein a hole beneath the magnetic resistor that defines the first and second digit lines beneath the magnetic resistor.
Dependencies are inferred from the claim text.