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US 7,002,033 B1Granted
Chemical vapor deposition material and chemical vapor deposition
AssigneeJsr Corporation
InventorsTatsuya Sakai, Sachiko Hashimoto, Yasuo Matsuki
Life of this patent
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Abstract
A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.
Claims2
A chemical vapor deposition material represented by the following formula (1):
- Ru3++LnXmYl (1)
- wherein L is a ligand represented by the following formula (2):
- wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms,
- X is a hydrogen anion, halogen anion, monovalent hydrocarbon anion having 1 to 10 carbon atoms or ligand represented by the following formula (3):
- wherein R4, R5, R6, R7 and R8 are each independently a hydrogen atom, hydrocarbon group having 1 to 10 carbon atoms or trimethylsilyl group, with the proviso that when at least two out of R4, R5, R6, R7 and R8 are hydrocarbon groups having 1 to 10 carbon atoms, they may be bonded together to form a 4- to 8-membered ring,
- Y is a ligand represented by the following formula (4):
- where in R9, R10, R11, R12, R13 and R14 are each independently a hydrogen atom or hydrocarbon group having 1 to 10 carbon atoms,
- n is an integer of 1 to 3, m is an integer of 0 to 2, l is 0 or 1, and (n+m) is 3.
5 more elements
Dependencies are inferred from the claim text.