Methods of fabricating semiconductor devices having salicide

Abstract

Methods for fabricating a semiconductor device with salicide are disclosed. One example method includes forming a gate electrode structure having a gate oxide film, a gate electrode, and a protection film stacked on a substrate in succession, and gate spacers on sidewalls of the stack of the gate oxide film, the gate electrode, and the protection film; forming an insulating film on an entire surface of the substrate, the insulating film exposing upper portions of the gate electrode and the gate spacers; and removing portions of the protection film and the gate spacers, to expose an upper portion of the gate electrode. The example method may also include applying a salicide forming metal on an entire surface of the substrate; and performing a heat treatment process to form salicide on the gate electrode and the gate spacers, selectively.

Dependencies are inferred from the claim text.