Laser thermal annealing methods for flash memory devices
AssigneeAdvanced Micro Devices, Inc.
InventorsArvind Halliyal, Mark T. Ramsbey, Robert B. Ogle
Life of this patent
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Abstract
A method of manufacturing an ONO (oxide-nitride-oxide) insulating layer for a flash memory device, the insulating layer including a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein at least one of the first oxide layer, the nitride layer and the second oxide layer are conditioned using laser thermal annealing.
Claims27
A method of manufacturing a flash memory device of a semiconductor device, comprising:
- growing or depositing a tunnel oxide on a substrate;
- depositing a first polysilicon layer over the tunnel oxide;
- forming an insulating layer over the first polysilicon layer, the insulating layer comprising a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein at least one of the first oxide layer, the nitride layer and the second oxide layer are conditioned using laser thermal annealing;
- depositing a polysilicon layer over the insulating layer;
- etching at least the polysilicon layer and the insulating layer;
- and
- forming a source region and a drain region in the substrate.
A method of manufacturing a flash memory device of a semiconductor device, comprising:
- forming an insulating layer over a substrate, the insulating layer comprising a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein at least one of the first oxide layer, the nitride layer and the second oxide layer are conditioned using laser thermal annealing;
- depositing a polysilicon layer over the insulating layer;
- etching at least the polysilicon layer and the insulating layer;
- forming a source region and a drain region in the substrate;
- and
- wherein the insulating layer is laser thermal annealed such that the layer has a substantially uniform grain size.
A method of manufacturing a flash memory device of a semiconductor device, comprising:
- forming an insulating layer over a substrate, the insulating layer comprising a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein at least one of the first oxide layer, the nitride layer and the second oxide layer are conditioned using laser thermal annealing;
- depositing a polysilicon layer over the insulating layer;
- etching at least the polysilicon layer and the insulating layer;
- forming a source region and a drain region in the substrate;
- and
- wherein the at least one layer that is conditioned using laser thermal annealing is first deposited using chemical vapor deposition, and the deposition and the laser thermal annealing are conducted in the same process chamber.
Dependencies are inferred from the claim text.