Generating mask patterns for alternating phase-shift mask lithography
AssigneeInternational Business Machines Corporation
InventorsLars W. Liebmann, Scott J. Bukofsky, Ioana Graur
Life of this patent
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Abstract
A method of generating patterns of a pair of photomasks from a data set defining a circuit layout to be provided on a substrate includes identifying critical segments of the circuit layout to be provided on the substrate. Block mask patterns are generated and then legalized based on the identified critical segments. Thereafter, phase mask patterns are generated, legalized and colored. The legalized block mask patterns and the legalized phase mask patterns that have been colored define features of a block mask and an alternating phase shift mask, respectively, for use in a dual exposure method for patterning features in a resist layer of a substrate.
Claims14
A method of generating patterns of a paired set of photomasks from a data set defining a circuit layout to be provided on a substrate, comprising:
- inputting a circuit layout;
- identifying critical segments of said circuit layout;
- generating and legalizing block mask patterns based on said identified critical segments;
- and
- generating, legalizing and coloring phase mask patterns for use in a dual exposure method with said legalized block mask patterns, said phase mask patterns including pairs of juxtaposed etched regions in said phase mask, each region of each said pair having a pathlength difference of an odd number of half wavelengths relative to the other region of each said pair,
- wherein said legalized block mask patterns define a block mask and said colored legalized phase mask patterns define an alternating phase shift mask, said block mask and said alternating phase shift mask operable to be used together in a dual exposure method for patterning critical dimensioned features on said substrate.
A computer readable medium including a set of instructions recorded thereon for performing a method of generating patterns of a paired set of photomasks from a data set defining a circuit layout to provided on a substrate, said method comprising:
- inputting a circuit layout;
- identifying critical segments of said circuit layout;
- generating and legalizing block mask patterns based on said identified critical segments;
- and
- generating, legalizing and coloring phase mask patterns for use in a dual exposure method with said legalized block mask patterns, said phase mask patterns including pairs of juxtaposed etched regions in said phase mask, each region of each said pair having a pathlength difference of an odd number of half wavelengths relative to the other region of each said pair,
- wherein said legalized block mask patterns define a block mask and said colored legalized phase mask patterns define an alternating phase shift mask, said block mask and said alternating phase shift mask operable to be used together in a dual exposure method for patterning critical dimensioned features on said substrate.
An apparatus for generating patterns of a paired set of photomasks from a data set defining a circuit layout to be provided on a substrate, comprising:
- a processor;
- and
- an input output (IO) interface connected to said processor,
- said processor being operable to input a circuit layout over said IO interface, to identity critical segments of said circuit layout, to generate and legalize block mask patterns based on said identified critical segments, and to thereafter generate, legalize and color phase mask patterns for use in a dual exposure method with said legalized block mask patterns, said phase mask patterns including pairs of juxtaposed etched regions in said phase mask, each region of each said pair having a pathlength difference of an odd number of half wavelengths relative to the other region of each said pair, wherein said legalized block mask patterns define a block mask and said colored legalized phase mask patterns define an alternating phase shift mask, said block mask and said alternating phase shift mask operable to be used together in a dual exposure method for patterning critical dimensioned features on said substrate.
Dependencies are inferred from the claim text.