Method for application of gating signal in insulated double gate FET
AssigneeNational Institute of Advanced Industrial Science and Technology
InventorsToshihiro Sekigawa, Hanpei Koike, Tadashi Nakagawa
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Abstract
In an insulated double gate FET, the threshold voltage during the operation of a transient response thereof is enabled to be arbitrarily and accurately controlled by a method that includes applying a first input signal intended to perform an ordinary logic operation to one of the gate electrodes thereof and applying, in response to this signal, a second signal that has a signal-level temporal-change direction as the first input signal and has at least one of the low level and the high level thereof shifted by a predetermined magnitude or endowed with a predetermined time difference or has the time slower or faster signal level change of the signal to the other gate electrode.
Claims4
A method for the application of a gating signal in an insulated double gate FET, which comprises applying, in response to a first signal fed into a first gate electrode, a second signal that has a same signal-level temporal-change direction and a same signal amplitude as the first signal and has a signal level shifted by a predetermined magnitude to a second gate electrode.
A method for the application of a gating signal in an insulated double gate FET, which comprises applying, in response to a first signal fed into a first gate electrode, a second signal that has a same signal-level temporal-change direction and a same signal amplitude as the first signal and has a slower or faster rise time or fall time to a second gate electrode.
A method for the application of an insulated gating signal in a double gate FET, which comprises applying, in response to a first signal fed into a first gate electrode, a second signal that has a same signal-level temporal-change direction and a same signal amplitude as the first signal and has a predetermined time difference to a second gate electrode.
Dependencies are inferred from the claim text.