Polymers for photoresist and photoresist compositions using the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsChi Hyeong Roh, Jae Chang Jung
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Abstract
The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: wherein, R* is an acid-labile group, and l is 1 or 2.
Claims15
A method for synthesizing a photoresist copolymer comprising:
- (a) dissolving in an organic solvent (i) a compound represented by the following Chemical Formula 1, (ii) a compound represented by the following Chemical Formula 2 and (iii) at least one of maleic anhydride and maleimide derivatives;
- and
- (b) adding a polymerization initiator to the resultant solution to induce a polymerization reaction.
- wherein m is 1 or 2;
- wherein
- R* is an acid-labile group, and
- l is 1 or 2.
A photoresist composition comprising:
- (i) a photoresist copolymer comprising a monomer of the formula:
- wherein, m is 1 or 2, and at least one monomer selected from the group consisting of maleic anhydride and a maleimide derivative;
- (ii) a photoacid generator;
- and
- (iii) an organic solvent.
Dependencies are inferred from the claim text.