US 6,977,718 B1Granted

Lithography method and system with adjustable reflector

AssigneeAdvanced Micro Devices, Inc.

InventorBruno M. LaFontaine

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Abstract

A method of reflective lithography includes placing an adjustable (configurable) multi-faceted mirror in a condenser that collects and redirects light from a source to a reticle, an imaging system, and finally a target to be patterned. The adjustable multi-faceted mirror has a plurality of separately adjustable mirror elements or facets. The orientation of the mirror elements may be adjusted to adjust the characteristics of the light reaching a reflective reticle in order to achieve certain imaging characteristics at the resist layer that is being exposed. For example, coherence, shape of the illumination at the pupil of the imaging system, and/or configuration of the light output may be changed. The method and a corresponding system may be employed in extreme ultraviolet light (EUVL) lithography.

Claims20

Dependent claims

A lithography method for selectively exposing parts of first and second targets, comprising:

performing a first patterning of a first target, wherein the first patterning includes:
directing light from a light source through a re-configurable reflective condenser in a first configuration to a first reflective reticle portion;
and
reflecting the light from the first reflective reticle portion to a first target portion to be selectively exposed;
after performing the first patterning, re-configuring the reflective condenser to a second configuration, wherein the re-configuring results in altering of light characteristics of light exiting the reflective condenser;
and
after the re-configuring, performing a second patterning of a second target, wherein the second patterning includes:
directing light from a light source through the re-configurable reflective condenser in the second configuration to a second reflective reticle portion;
and
reflecting the light from the second reflective reticle portion to a second target portion to be selectively exposed.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/791,263Filed 2 Mar 2004
Granted: 20 Dec 2005
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

G03F 7/70583
Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption: speckle reduction, e.g.…
G02B 26/0858
The reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD: the reflecting means being moved or deformed by piezoelectric means
G03F 7/70116
Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings,…:…
G03F
Photomechanical production of textured or patterned surfaces