Electronic structures with reduced capacitance
AssigneeInternational Business Machines Corporation
InventorsStephen McConnell Gates, Alfred Grill
Life of this patent
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Abstract
An apparatus and method is described incorporating one or more layers of SiCOH and one or more layers of patterned conductors in an integrated circuit chip. The invention overcomes the problem of capacitance by lowering the k of the delectric and overcomes the problem of breakdown voltage and the leakage curent by tailoring the composition of SiCOH.
Claims22
An electronic structure comprising at least a SiCOH dielectric material in contact with a conductor, said SiCOH dielectric material comprising atoms of Si, C, O and H, wherein H is in the range from 10 to 55 at %, C is in the range from 5 to 45 at %, Si is in the range from 5 to 50 at % and O is in the range from 0 to 45 at % and having a dielectric constant of less than 3.5, a breakdown field of greater than 4.5 MV/cm and a leakage current at 1 MV/cm applied field of less than about 10 nAMPS/cm2.
An electronic structure comprising at least one dielectric material comprised of atoms of Si, C, O and H, wherein H is in the range from 10 to 55 at %, C is in the range from 5 to 45 at %, Si is in the range from 5 to 50 at % and O is in the range from 0 to 45 at %, which has a dielectric constant of less than 3.5, a breakdown field of greater than 4.5 MV/cm and a leakage current at 1 MV/cm applied field of less than about 10 nAMPS/cm2.
An electronic structure comprising at least a SiCOH dielectric material in contact with a conductor, said SiCOH dielectric material comprising atoms of Si, C, O and H, having a dielectric constant of less than 3.5 and a graded composition that includes a dense region containing lees C at an outer surface which serves as a non-permeable barrier region.
An electronic structure comprising at least a SiCOH dielectric material in contact with a conductor, said SiCOH dielectric material comprising atoms of Si, C, O and H, having a dielectric constant of less than 3.5 and a graded composition which includes three different carbon contents present in different zones of said dielectric material.
An electronic structure comprising at least a SiCOH dielectric material in contact with a conductor, said SiCOH dielectric material comprising atoms of Si, C, O and H, having a dielectric constant of less than 3.5 and a graded composition which includes two different carbon contents present in different zones of said dielectric material.
Dependencies are inferred from the claim text.