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AssigneeMicron Technology, Inc.
InventorsFernando Gonzalez, Chandra Mouli
Estimating the term…
Methods of forming field effect transistors and resultant field effect transistor circuitry are described. In one embodiment, a semiconductive substrate includes a field effect transistor having a body. A first resistive element is received by the substrate and connected between the transistor's gate and the body. A second resistive element is received by the substrate and connected between the body and a reference voltage node. The first and second resistive elements form a voltage divider which is configured to selectively change threshold voltages of the field effect transistor with state changes in the gate voltage. In a preferred embodiment, first and second diode assemblies are positioned over the substrate and connected between the gate and body, and the body and a reference voltage node to provide the voltage divider.
Field effect transistor circuitry comprising:
Field effect transistor circuitry comprising:
Monolithic field effect transistor circuitry comprising:
Field effect transistor circuitry comprising:
Field effect transistor circuitry comprising:
Field effect transistor circuitry comprising:
Field effect transistor circuitry comprising:
Field effect transistor circuitry comprising:
Dependencies are inferred from the claim text.