Discriminative SOI with oxide holes underneath DC source/drain
AssigneeInternational Business Machines Corporation
InventorRobert C. Wong
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Abstract
A selective SOI structure having body contacts for all the devices while excluding the buried oxide that is directly underneath diffusions of DC nodes such as applied voltage Vdd, ground GND, reference voltage Vref, and other like DC nodes is provided. The selective SOI structure of the present invention can be used in ICs to enhance the performance of the circuit. The selective SOI structure of the present invention includes a silicon-on-insulator (SOI) substrate material comprising a top Si-containing layer having a plurality of SOI devices located thereon. The SOI devices are in contact with an underlying Si-containing substrate via a body contact region. A DC node diffusion region not containing an underlying buried oxide region is adjacent to one of the SOI devices.
Claims22
A selective silicon-on-insulator (SOI) structure comprising:
- a silicon-on-insulator (SOI) substrate material comprising a top Si-containing layer having a plurality of SOI devices located thereon, said SOI devices are in contact with an underlying Si-containing substrate via a body contact region;
- and
- a DC node diffusion region adjacent to one of said SOI devices, said DC node diffusion region is located within bulk silicon without oxide underneath thereby the DC node diffusion region is in contact with said Si-containing substrate.
An integrated circuit comprising at least one selective silicon-on-insulator (SOI) structure said at least one selective SOI structure comprising a silicon-on-insulator (SO) substrate material comprising a top Si-containing layer having a plurality of SOI devices located thereon, said SOI devices are in contact with an underlying Si-containing substrate via a body contact region;
- and a DC node diffusion region adjacent to one of said SOI devices, said DC node diffusion region is located within bulk silicon without oxide underneath thereby the DC node diffusion region is in contact with said Si-containing substrate.
A semiconductor substrate comprising:
- an SOI substrate;
- a DC node diffusion region in said SOI substrate;
- and
- a buried oxide material within said SOI substrate, wherein said DC node diffusion region is located within bulk silicon without oxide underneath thereby the DC node diffusion region is in contact with an underlying Si-containing substrate of said SOI substrate.
Dependencies are inferred from the claim text.