Back to results
US 6,958,503 B2Granted
Nonvolatile magnetic memory device
AssigneeSony Corporation
InventorMakoto Motoyoshi
Life of this patent
Estimating the term…
Abstract
The MRAM has a transistor for selection, a lower insulating interlayer, a first connecting hole, a first wiring formed on the lower insulating interlayer, a tunnel magnetoresistance device formed on the first wiring through an insulating film, an upper insulating interlayer, and a second wiring, in which a lower surface of the tunnel magnetoresistance device is electrically connected to the first connecting hole through a second connecting hole, and the tunnel magnetoresistance device, the insulating film and the first wiring have nearly the same widths along the second direction.
Claims5
A nonvolatile magnetic memory device comprising;
- (A) a transistor for selection which is formed in a semiconductor substrate,
- (B) a lower insulating interlayer which covers the transistor for selection,
- (C) a first connecting hole which is formed in a first opening portion made through the lower insulating interlayer and is connected to the transistor for selection,
- (D) a first wiring which is formed on the lower insulating interlayer, is composed of an electrically conductive layer, and extends in a first direction,
- (E) a tunnel magnetoresistance device which is formed on the first wiring through an insulating film, and has a stacking structure formed of a first ferromagnetic layer, a tunnel barrier and a second ferromagnetic layer which are positioned in this order from below,
- (F) an upper insulating interlayer which covers the tunnel magnetoresistance device, the lower insulating interlayer and an extending portion of the first wiring, and
- (G) a second wiring which is formed on the upper insulating interlayer, is electrically connected to a top surface of the tunnel magnetoresistance device, and extends in a second direction different from the first direction,
- in which a lower surface of the tunnel magnetoresistance device is electrically connected to the first connecting hole through a second connecting hole which is formed in a second opening portion made through at least the insulating film and the first wiring and is electrically insulated from the first wiring, and
- the tunnel magnetoresistance device, the insulating film and the first wiring have nearly the same widths along the second direction.
6 more elements
Dependencies are inferred from the claim text.