Scribe lane for gettering of contaminants on SOI wafers and gettering method

A method of gettering impurities on a silicon-on-insulator wafer including a silicon active layer having at least two die pads formed thereon, the at least two die pads separated by at least one scribe lane, comprising the steps of:

• forming at least one cavity through the silicon active layer in the at least one scribe lane;
• filling the cavity with a fill material;
• adding at least one dopant to the fill material to form at least one gettering plug including a plurality of gettering sites;
• and
• subjecting the wafer to conditions to getter at least one impurity into the plurality of gettering sites.

A method of gettering impurities on a silicon-on-insulator wafer including a silicon active layer, buried oxide layer and a silicon substrate, the silicon active layer having at least two die pads formed thereon, the at least two die pads separated by at least one scribe lane, comprising the steps of:

• forming a plurality of cavities through the silicon active layer and the buried oxide layer to the silicon substrate in the at least one scribe lane;
• filling the cavities with a fill material;
• implanting at least one dopant into the fill material in the cavities to form at least one gettering plug including a plurality of gettering sites;
• and
• subjecting the wafer to conditions to getter at least one impurity into the plurality of gettering sites.