US 6,949,325 B2 · Negative resist composition with fluorosulfonamide-containing polymer

Abstract

A negative resist composition is disclosed, wherein the resist composition includes a polymer having at least one fluorosulfonamide monomer unit having one of the following two formulae: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, or alkyl; P is 0 or 1; R1 is a linear or branched alkyl group of 1 to 20 carbons; R2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons; and n is an integer from 1 to 6. A method of forming a patterned material layer on a substrate is also disclosed, wherein the method includes applying the fluorosulfonamide-containing resist composition to the substrate to form a resist layer on the material layer; patternwise exposing the resist layer to imaging radiation; removing portions of the resist layer not exposed to the imaging radiation to create spaces in the resist layer corresponding to the pattern; and removing portions of the material layer at the spaces formed in the resist layer, thereby forming a patterned material layer.

Claims27

Dependent claims

A negative resist composition comprising a polymer, the polymer comprising at least one fluorosulfonamide monomer unit having one of the following two formulae:

wherein M is a polymerizable backbone moiety which is
where R3 is hydrogen, a linear or branched alkyl group of 1 to 20 carbons a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons, or CN;
Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, and alkyl;
P is 0 or 1;
R1 is a linear or branched alkyl group of 1 to 20 carbons;
R2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbon or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons;
and
n is an integer from 1 to 6.

5 more elements

A method of forming a patterned material layer on a substrate, the method comprising:

(a) providing a substrate having a material layer on a surface;
(b) applying a resist composition to the substrate to form a resist layer on the material layer, the resist composition comprising a polymer, the polymer comprising at least one fluorosulfonamide monomer unit having one of the following two formulae:
wherein M is a polymerizable backbone moiety which is
where R3 is hydrogen, a linear or branched alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons, or CN;
Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, and alkyl;
P is 0 or 1;
R1 is a linear or branched alkyl group of 1 to 20 carbons;
R2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons;
and
n is an integer from 1 to 6;
(c) patternwise exposing the resist layer to imaging radiation;
(d) removing portions of the resist layer not exposed to the imaging radiation in step (c) to create spaces in the resist layer corresponding to the pattern;
and
(e) removing portions of the material layer at the spaces formed in step (d), thereby forming the patterned material layer.

11 more elements

Dependencies are inferred from the claim text.

Negative resist composition with fluorosulfonamide-containing polymer

Life of this patent

Negative resist composition with fluorosulfonamide-containing polymer

Life of this patent

Abstract

Claims27