Method and geometry for reducing drift in electrostatically actuated devices

Method for forming an electrostatically actuated device comprising:

• etching a dielectric material on a substrate such that an electric field applied to exposed dielectric material by conducting sections comprises a substantially homogeneous electric field,
• the etching resulting in reducing the surface area of the exposed dielectric material by reducing the width of a gap between said conducting sections, said gap exposing the surface of the dielectric material.

Geometry for reducing drift in an electrostatically actuated device, said electrostatically actuated device including a dielectric material, for insulating conducting sections from a ground, said conducting sections being used to generate an electric field for controlling thereby the electrostatically actuated device, comprising:

• said dielectric material, configured such that a surface area of the an exposed portion of said dielectric material is reduced by reducing the width of a gap between said conducting sections, said gap exposing the surface of the dielectric material such that said electric field applied to exposed dielectric material comprises a substantially homogeneous electric field.

An electrostatically actuated device, comprising:

• a dielectric material, for insulating conducting sections from a ground, said conducting sections being used to generate an electric field for controlling thereby the electrostatically actuated device;
• wherein
• a geometry of said dielectric material is adapted such that a surface area of an exposed portion of said dielectric material is reduced by reducing the width of a gap between said conducting sections, said gap exposing the surface of the dielectric material such that when said electric field is applied, the electric field exposed to the dielectric material does not substantially change thereafter.